Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s

IEEE Electron Device Letters

Volumn 14, Issue 2, 1993, Pages 69-71

  Zanoni, Enrico ^a   Crabbé, Emmanuel F ^b   Stork, Johannes M C ^b   Pavan, Paolo ^a   Verzellesi, Giovanni ^a   Vendrame, Loris ^a   Canali, Claudio ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001839302     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215111     Document Type: Article

References (10)

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