A Physics-Based Current-Dependent Base Resistance Model for Advanced Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 1055-1062

  Yuan, Jiann Shiun ^a   Liou, Juin J ^b   Eisenstadt, William R ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHYSICS - SOLID STATE;

BASE-CONDUCTIVITY MODULATION; BASE-WIDTH MODULATION; CURRENT-DEPENDENT BASE RESISTANCE MODEL; EMITTER CURRENT CROWDING; PHASE PUSHOUT;

TRANSISTORS, BIPOLAR;

EID: 0024051033     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3364     Document Type: Article

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