Low-Temperature (77 K) BJT Model with Temperature Dependences on the Injected Condition and Base Resistance

IEEE Transactions on Electron Devices

Volumn 37, Issue 7, 1990, Pages 1688-1697

  Satake, Hideki ^a   Hamasaki, Toshihiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

BASE PUSHOUT EFFECT; BASE RESISTANCE; CONDUCTIVITY MODULATION EFFECT; EMITTER CURRENT-CROWDING EFFECT; HOLE CONCENTRATION; INJECTION CONDITION;

TRANSISTORS, BIPOLAR;

EID: 0025462648     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.55756     Document Type: Article

References (40)

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