Extended defects in wurtzite nitride semiconductors

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 266-275

  Potin, V ^a   Vermaut, P ^a   Ruterana, P ^a   Nouet, G ^a  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

Author keywords

Defects; GaN; Unipolar layers

Indexed keywords

EID: 0000505234     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0398-3     Document Type: Article

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