Optoelectronic and structural properties of high-quality GaN grown by hydride vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 189-194

  Molnar, R J ^a   Aggarwal, R ^a   Liau, Z L ^a   Brown, E R ^a   Melngailis, I ^a   Gotz, W ^a   Romano, L T ^a   Johnson, N M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; HYDRIDES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; GALLIUM CHLORIDE; GALLIUM NITRIDE; HALL MOBILITY; HYDRIDE VAPOR PHASE EPITAXY; OPTOELECTRONIC PROPERTIES; PHOTOLUMINESCENCE SPECTRA; STRUCTURAL PROPERTIES; VERTICAL REACTOR DESIGN;

FILM GROWTH;

EID: 0029726914     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)