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Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 279-282

Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy

(5) Vermaut, P a Ruterana, P a Nouet, G a Salvador, A b Morkoc H b

a CNRS (France)

b University of Illinois at Urbana Champaign (United States)

Author keywords

Gallium nitride; Molecular beam epitaxy; Prismatic defects

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CYCLOTRONS; ELECTRON MICROSCOPY; ELECTRONS; HYDROGEN; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

DRUM'S MODELS; ELECTRON CYCLOTRONS; GALLIUM NITRIDE; PRISMATIC DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0040260989 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01867-3 Document Type: Article

Times cited : (10)

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