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Volumn 423, Issue , 1996, Pages 551-556
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Structure of the 2H-AlN/6H-SiC interface
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
DISLOCATIONS (CRYSTALS);
ELECTRON CYCLOTRON RESONANCE;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
STACKING FAULTS;
SUBSTRATES;
ALUMINUM NITRIDE;
BASAL STACKING FAULTS;
PRISMATIC STACKING FAULTS;
SILICON CARBIDE;
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EID: 0030386550
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (10)
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References (12)
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