The atomic structure of {1010} inversion domain boundaries in GaN/sapphire layers

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2176-2183

  Potin, V ^a   Ruterana, P ^a   Nouet, G ^a  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001259032     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366094     Document Type: Article

References (31)

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