TEM and PL characterization of MBE-grown epitaxial GaN/GaAs

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 311-316

  Xin, Yan ^a   Brown, P D ^a   Boothroyd, C B ^a   Preston, A R ^a   Humphreys, C J ^a   Cheng, T S ^a   Foxon, C T ^a   Andrianov, A V ^a   Orton, J W ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL MICROSTRUCTURE; DENSITY (SPECIFIC GRAVITY); ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0030387817     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)