Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

Applied Physics Letters

Volumn 85, Issue 16, 2004, Pages 3540-3542

  Pezzi, R P ^a   Miotti, L ^a   Bastos, K P ^a   Soares, G V ^a   Driemeier, C ^a   Baumvol, I J R ^b   Punchaipetch, P ^c   Pant, G ^c   Gnade, B E ^c   Wallace, R M ^c   Rotondaro, A ^d   Visokay, J M ^d   Chambers, J J ^d   Colombo, L ^d  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c The University of Texas at Dallas   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; DEFECT STRUCTURES; NUCLEAR REACTIONS; NUCLEAR RESONANT REACTION PROFILING (NRP);

DEPOSITION; DEUTERIUM; DIELECTRIC MATERIALS; HYDROGEN; LEAKAGE CURRENTS; OXIDATION; OXYGEN; RAPID THERMAL ANNEALING; SILICA; SILICON; SPUTTERING; VACUUM;

DIELECTRIC FILMS;

EID: 9744242013     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801682     Document Type: Article

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