Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 144-146

  Choi, Rino ^a   Onishi, Katsunori ^a   Kang, Chang Seok ^a   Cho, Hag Ju ^a   Kim, Y H ^a   Krishnan, Siddharth ^a   Akbar, M S ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Deuterium; Forming gas; HfO2; Interface quality; MOSFET; Reliability

Indexed keywords

ANNEALING; CARRIER MOBILITY; DEUTERIUM; ELECTRIC CURRENTS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; RELIABILITY; THRESHOLD VOLTAGE;

FORMING GAS; GATE DIELECTRICS; HAFNIUM OXIDE; HIGH VOLTAGE STRESS; INTERFACE QUALITY;

MOSFET DEVICES;

EID: 0037938631     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809531     Document Type: Letter

References (6)

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