GaN Schottky multiplier diodes prepared by electroplating: A study of passivation technology

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1273-1279

  Cojocari, O ^a,b   Popa, V ^a   Ursaki, V V ^a   Tiginyanu, I M ^a   Hartnagel, H L ^b   Daumiller, I ^c  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTROPLATING; LIGHT EMISSION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET RADIATION;

ELECTROCHEMICAL METAL DEPOSITION; HIGH-FREQUENCY MULTIPLIERS; SCHOTTKY VARACTORS;

SCHOTTKY BARRIER DIODES;

EID: 9144271289     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/011     Document Type: Article

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