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Volumn 14, Issue 48, 2002, Pages 13337-13344

Electrical and optical properties of GaN/Al2O3 interfaces

(9) Look, D C a,b Jones, R L a Sun, X L c Brillson, L J c Ager III, J W d Park, S S e Han, J H e Molnar, R J f Maslar, J E g

a AIR FORCE RESEARCH LABORATORY (United States)

b WRIGHT STATE UNIVERSITY (United States)

c Ohio State University (United States)

d LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

e Samsung Advanced Institute of Technology (SAIT) (South Korea)

f MIT LINCOLN LABORATORY (United States)

g NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER CONCENTRATION; CATHODOLUMINESCENCE; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HALL EFFECT; LIGHT EMISSION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY; RAMAN PLASMON PHONON LINES; VACANCY ACCEPTORS;

INTERFACES (MATERIALS);

EID: 0037122163 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/48/386 Document Type: Article

Times cited : (20)

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