The effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaN/sapphire templates

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Young, Alexander P ^a   Brillson, Leonard J ^a   Naoi, Yoshiki ^b   Tu, Charles W ^b  

^a Ohio State University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA SOURCES; SAPPHIRE;

ELECTRICAL MOBILITY; FILM MOBILITY; ION FLUX;

GALLIUM NITRIDE;

EID: 3242785635     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300005081     Document Type: Conference Paper

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