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Volumn 106, Issue 10, 1998, Pages 701-704

Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO

(6) Reynolds, D C a Look, D C a Jogai, B a Van Nostrand, J E b Jones, R b Jenny, J b

a WRIGHT STATE UNIVERSITY (United States)

b WRIGHT PATTERSON AIR FORCE BASE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SPECTROSCOPY; ZINC OXIDE;

DEEP LEVEL; GALLIUM NITRIDE; GREEN LUMINESCENCE; SHALLOW DONOR; YELLOW LUMINESCENCE;

LUMINESCENCE OF INORGANIC SOLIDS;

EID: 0032093740 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(98)00048-9 Document Type: Article

Times cited : (149)

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