Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1277-1281

  Hahn, Y B ^a   Im, Y H ^a   Park, J S ^a   Nahm, K S ^a   Lee, Y S ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; FILM GROWTH; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

LATTICE DISORDERS;

DRY ETCHING;

EID: 0035393851     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1336830     Document Type: Article

References (25)