Stress Power Dependent Self-Heating Degradations of Metal-Induced Laterally Crystallized N-Type Polycrystalline Silicon Thin-Film Transistors

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3276-3284

  Wang, Mingxiang ^b   Yang, Zhenyu ^a   Hao, Han ^a   Wong, Man ^a  

^a SOOCHOW UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Field effect mobility; metal induced lateral crystallization; polycrystalline silicon (poly Si); self heating (SH) degradation; thin film transistors (TFTs)

Indexed keywords

EID: 85008047843     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/TED.2007.908907     Document Type: Article

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