Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films

Thin Solid Films

Volumn 426, Issue 1-2, 2003, Pages 250-257

  Kouvatsos, D N ^a   Davazoglou, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Crystallization; Interfaces; MOS structures; Silicon

Indexed keywords

DEGRADATION EFFECTS;

CRYSTALLIZATION; DEGRADATION; HYDROGENATION; MOSFET DEVICES; PASSIVATION; POLYSILICON; THRESHOLD VOLTAGE; ULTRAVIOLET SPECTROSCOPY;

THIN FILM TRANSISTORS;

EID: 0037463273     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00040-3     Document Type: Article

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