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Volumn 72, Issue 4, 2005, Pages 339-342
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On-current modeling of polycrystalline silicon thin-film transistors
c
NONE
(India)
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
CARRIER MOBILITY;
GRAIN BOUNDARIES;
POLYCRYSTALLINE MATERIALS;
SILICON;
THERMAL EFFECTS;
POLY-SI INVERSION;
THERMIONIC EMISSION THEORY;
TRAP STATE DENSITY;
THIN FILM TRANSISTORS;
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EID: 27644491502
PISSN: 00318949
EISSN: None
Source Type: Journal
DOI: 10.1238/Physica.Regular.072a00339 Document Type: Article |
Times cited : (14)
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References (16)
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