Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1259-1266

  Farmakis, F V ^a   Dimitriadis, C A ^a   Brini, J ^a   Kamarinos, G ^a   Gueorguiev, V K ^b   Ivanov, Tz E ^b  

^a Grenoble INP Phelma   (France)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; IMPACT IONIZATION; TRANSCONDUCTANCE;

ELECTRON INJECTION; HIGH DRAIN VOLTAGE STRESS; HOT CARRIER PHENOMENA; HOT HOLE INJECTION; INTERFACE STATES; LOW DRAIN VOLTAGE STRESS; PHOTOEMISSION SPECTROSCOPY; POLYSILICON THIN FILM TRANSISTORS; TRANSCONDUCTANCE DEGRADATION;

THIN FILM TRANSISTORS;

EID: 0032662507     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00065-9     Document Type: Article

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