Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 251-257

  Takechi, Kazushige ^a   Nakata, Mitsuru ^b   Kanoh, Hiroshi ^b   Otsuki, Shigeyoshi ^a   Kaneko, Setsuo ^b  

^a Technology Research Association for Advanced Display Materials TRADIM   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Heat equation; Polycrystalline silicon thin film transistor (poly Si TFT); Pulse stress; Self heating; Threshold voltage Vt shift

Indexed keywords

COMPUTER SIMULATION; COPPER; ESTIMATION; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THRESHOLD VOLTAGE;

COPPER FILM; HEAT EQUATION; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; PULSE STRESS;

THIN FILM TRANSISTORS;

EID: 31744439466     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.861729     Document Type: Article

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