An effective channel mobility-based analytical on-current model for polycrystalline silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 54, Issue 4, 2007, Pages 869-874

  Wang, Mingxiang ^a,b   Wong, Man ^b  

^a SOOCHOW UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Barrier controlled conduction; Drain current modeling; Effective channel mobility; Mobility degradation; Polycrystalline silicon (poly Si); Thin film transistors (TFTs)

Indexed keywords

CARRIER MOBILITY; DRAIN CURRENT; MATHEMATICAL MODELS; POLYSILICON;

BARRIER-CONTROLLED CONDUCTION; CHANNEL MOBILITY; CONDUCTION CHANNEL; MOBILITY DEGRADATION;

THIN FILM TRANSISTORS;

EID: 34147180394     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.891248     Document Type: Article

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