Study of degradation phenomenon due to a combination of contamination and self-heating in poly-Si thin film transistors fabricated by a low-temperature process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4213-4217

  Inoue, Satoshi ^a   Takenaka, Satoshi ^a   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Contamination; Low temperature process; Poly Si TFT (polycrystalline silicon thin film transistor); Reliability; Self heating; Temperature; Thin films

Indexed keywords

CHARGE TRANSFER; CONTAMINATION; DEGRADATION; FILM PREPARATION; LOW TEMPERATURE OPERATIONS; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; POLYSILICON; POTASSIUM; RELIABILITY; SODIUM; THERMAL CONDUCTIVITY;

LOW TEMPERATURE PROCESS; MOBILE IONS; POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR; SELF HEATING;

THIN FILM TRANSISTORS;

EID: 0141829732     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4213     Document Type: Article

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