Characteristics of low-temperature poly-Si TFTs on Al/glass substrates

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1087-1091

  Mishima, Y ^a   Yoshino, K ^a   Takei, M ^a   Sasaki, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Al substrate; Low temperature poly Si TFT; Self heating; Threshold voltage

Indexed keywords

ALUMINUM; ANODIC OXIDATION; GLASS; LOW TEMPERATURE EFFECTS; NUMERICAL ANALYSIS; POLYSILICON; SUBSTRATES; THRESHOLD VOLTAGE;

SELF-HEATING;

THIN FILM TRANSISTORS;

EID: 0035366365     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925231     Document Type: Article

References (8)

1. Low-temperature poly-Si TFT technology
2. LTPS for AMLCD on glass and polymer substrates
3. Fabrication of high-mobility poly-Si TFT's on flexible stainless-steel substrates
4. High performance CMOS circuits fabricated by low temperature poly-Si TFT's on a glass substrates
5. Uniformity of excimer laser-annealed polycrystalline silicon
6. Ultra-fast(0.5-μm) CMOS circuits in fully depleted SOI films
7. Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors