SCOPUS 정보 검색 플랫폼

Volumn 25, Issue 46, 2015, Pages 7208-7214

High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer

(8) Shokouh, Seyed Hossein Hosseini a Jeon, Pyo Jin a Pezeshki, Atiye a Choi, Kyunghee a Lee, Hee Sung a Kim, Jin Sung a Park, Eun Young a Im, Seongil a

a Yonsei University (South Korea)

Author keywords

field effect transistors; nanoflakes; organic inorganic hybrid materials

Indexed keywords

BUFFER LAYERS; DIELECTRIC MATERIALS; FLUORINE CONTAINING POLYMERS; GATE DIELECTRICS; HOLE MOBILITY; HYBRID MATERIALS; SUBSTRATES;

DEVICE FABRICATIONS; ELECTRONIC NANODEVICES; GLASS SUBSTRATES; HIGH-K DIELECTRIC; LOW K DIELECTRICS; NANO-FLAKES; ORGANIC BILAYERS; ORGANIC-INORGANIC HYBRID MATERIALS;

FIELD EFFECT TRANSISTORS;

EID: 85000420367 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201502008 Document Type: Article

Times cited : (73)

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