Stable low-voltage operation top-gate organic field-effect transistors on cellulose nanocrystal substrates

ACS Applied Materials and Interfaces

Volumn 7, Issue 8, 2015, Pages 4804-4808

  Wang, Cheng Yin ^a   Fuentes Hernandez, Canek ^a   Liu, Jen Chieh ^b   Dindar, Amir ^a   Choi, Sangmoo ^a   Youngblood, Jeffrey P ^b   Moon, Robert J ^b,c   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b PURDUE UNIVERSITY   (United States)

^c FOREST PRODUCTS LABORATORY   (United States)

Author keywords

ambient stability; cellulose; low voltage; organic field effect transistor; top gate geometry

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; BLENDING; CELLULOSE; CELLULOSE DERIVATIVES; CELLULOSE NANOCRYSTALS; GATE DIELECTRICS; ORGANIC CHEMICALS; PASSIVATION; SUBSTRATES; THRESHOLD VOLTAGE; TRANSISTORS;

AMBIENT STABILITY; LOW OPERATING VOLTAGE; LOW THRESHOLD VOLTAGE; LOW VOLTAGE OPERATION; LOW VOLTAGES; OPERATIONAL STABILITY; SEMICONDUCTOR LAYERS; TOP GATE;

ORGANIC FIELD EFFECT TRANSISTORS;

CELLULOSE; GEOMETRY; SUBSTRATES; TRANSISTORS;

EID: 84924269094     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am508723a     Document Type: Article

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