Wide-range controllable n-doping of molybdenum disulfide (MoS2) through thermal and optical activation

ACS Nano

Volumn 9, Issue 3, 2015, Pages 2368-2376

  Park, Hyung Youl ^a   Lim, Myung Hoon ^a   Jeon, Jeaho ^b   Yoo, Gwangwe ^a   Kang, Dong Ho ^a   Jang, Sung Kyu ^b   Jeon, Min Hwan ^b   Lee, Youngbin ^b   Cho, Jeong Ho ^b   Yeom, Geun Young ^b   Jung, Woo Shik ^c   Lee, Jaeho ^d   Park, Seongjun ^d   Lee, Sungjoo ^a,b   Park, Jin Hong ^a  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Stanford University   (United States)

^d SAMSUNG Electronics   (South Korea)

Author keywords

controllable doping; MoS2; optical activation; thermal activation; wide range

Indexed keywords

CHEMICAL ACTIVATION; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICES; SILICATES; SULFUR COMPOUNDS; TRANSITION METALS; TUNGSTEN COMPOUNDS;

ELECTRICAL AND OPTICAL PROPERTIES; IMPLANTATION TECHNIQUE; MOS2; OPTICAL ACTIVATION; PHOSPHORUS SILICATE GLASS; THERMAL ACTIVATION; TRANSITION METAL DICHALCOGENIDES; WIDE-RANGE;

SEMICONDUCTOR DOPING;

EID: 84925638938     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b00153     Document Type: Article

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