Systematic reliability study of top-gate p- and n-channel organic field-effect transistors

ACS Applied Materials and Interfaces

Volumn 6, Issue 5, 2014, Pages 3378-3386

  Hwang, Do Kyung ^a,b   Fuentes Hernandez, Canek ^a   Fenoll, Mathieu ^a,c   Yun, Minseong ^a   Park, Jihoon ^d   Shim, Jae Won ^a   Knauer, Keith A ^a   Dindar, Amir ^a   Kim, Hyungchul ^e   Kim, Yongjin ^e   Kim, Jungbae ^a   Cheun, Hyeunseok ^a   Payne, Marcia M ^f   Graham, Samuel ^e   Im, Seongil ^d   Anthony, John E ^f   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Korea Institute of Science and Technology   (South Korea)

^c SOLVAY S A   (Belgium)

^d Yonsei University   (South Korea)

^e GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^f UNIVERSITY OF KENTUCKY   (United States)

Author keywords

device reliability; organic electronics; organic field effect transistors; photoexcited charge collection spectroscopy; soluble organic semiconductor

Indexed keywords

GATE DIELECTRICS; ORGANIC FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS;

BI-LAYER; CHARGE COLLECTION; DEVICE RELIABILITY; ORGANIC ELECTRONICS; SOLUBLE ORGANIC SEMICONDUCTORS;

OXYGEN;

EID: 84896351939     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am405424k     Document Type: Article

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