Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures

ACS Nano

Volumn 10, Issue 11, 2016, Pages 10283-10293

  Xia, Feifei ^a   Shao, Zhibin ^a   He, Yuanyuan ^a,b   Wang, Rongbin ^a,c   Wu, Xiaofeng ^a   Jiang, Tianhao ^a   Duhm, Steffen ^a   Zhao, Jianwei ^b   Lee, Shuit Tong ^a   Jie, Jiansheng ^a  

^a SOOCHOW UNIVERSITY   (China)

^b JIAXING UNIVERSITY   (China)

^c HUMBOLDT UNIVERSITY   (Germany)

Author keywords

field effect transistors; II VI nanostructures; p type doping; SCTD; surface charge transfer doping; transition metal oxides

Indexed keywords

CALCULATIONS; CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELD EFFECTS; ENERGY GAP; FIELD EFFECT TRANSISTORS; METALS; MOLYBDENUM OXIDE; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PHOTOELECTRONS; PHOTONS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SURFACE CHARGE; TRANSISTORS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WIDE BAND GAP SEMICONDUCTORS; WORK FUNCTION;

FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; HIGH PERFORMANCE DEVICES; INTERFACIAL CHARGE TRANSFER; P-TYPE DOPING; SCTD; SEMICONDUCTOR-TO-METAL TRANSITIONS; THEORETICAL CALCULATIONS; TRANSITION-METAL OXIDES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84997194369     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b05884     Document Type: Article

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