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Volumn 96, Issue 21, 2010, Pages

Surface transfer hole doping of epitaxial graphene using MoO3 thin film

(12) Chen, Zhenyu a,b Santoso, Iman a,c Wang, Rui a Xie, Lan Fei a Mao, Hong Ying a Huang, Han a Wang, Yu Zhan a Gao, Xing Yu a Chen, Zhi Kuan d Ma, Dongge b Wee, Andrew Thye Shen a Chen, Wei a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY (China)

c GADJAH MADA UNIVERSITY (Indonesia)

d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; ELECTRON TRANSFER; EPITAXIAL GRAPHENE; HOLE ACCUMULATION; HOLE DENSITIES; HOLE-DOPING; IN-SITU; P-TYPE DOPING; SURFACE TRANSFER; WORK-FUNCTION DIFFERENCE;

PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; THIN FILMS; VAPOR DEPOSITION;

GRAPHENE;

EID: 77956253707 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3441263 Document Type: Article

Times cited : (141)

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