MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

Light: Science and Applications

Volumn 4, Issue , 2015, Pages

  Li, Xinchen ^a   Xie, Fengxian ^a   Zhang, Shaoqing ^b   Hou, Jianhui ^b   Choy, Wallace C H ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

metal oxides carrier transport layers; normal and inverted device architectures; organic light emitting diodes; organic solar cells; room temperature solution process

Indexed keywords

ARCHITECTURE; CESIUM COMPOUNDS; ELECTRON TRANSPORT PROPERTIES; MOLAR RATIO; MOLYBDENUM OXIDE; OPTOELECTRONIC DEVICES; ORGANIC SOLAR CELLS; TRANSITION METAL OXIDES; TRANSITION METALS; VANADIUM COMPOUNDS;

CARRIER TRANSPORT LAYERS; ELECTRON TRANSPORT LAYERS; INVERTED ARCHITECTURES; INVERTED DEVICES; ORGANIC LIGHT EMITTING DIODES(OLEDS); ORGANIC OPTOELECTRONICS; SOLUTION PROCESS; SOLUTION-BASED PROCESS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 84927625644     PISSN: 20955545     EISSN: 20477538     Source Type: Journal    
DOI: 10.1038/lsa.2015.46     Document Type: Article

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