Tunable electrical properties of silicon nanowires via surface-ambient chemistry

ACS Nano

Volumn 4, Issue 6, 2010, Pages 3045-3052

  Yuan, G D ^a   Zhou, Y B ^a,b   Guo, C S ^a   Zhang, W J ^a   Tang, Y B ^a   Li, Y Q ^a,c   Chen, Z H ^a   He, Z B ^a   Zhang, X J ^a,c   Wang, P F ^b   Bello, I ^a   Zhang, R Q ^a   Lee, C S ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^c SOOCHOW UNIVERSITY   (China)

Author keywords

Core shell model; Electronic properties; Field effect transistors; Silicon nanowires; Surface charge transfer doping

Indexed keywords

AQUEOUS LAYER; BAND ENERGY; CORE SHELL STRUCTURE; CORE-SHELL MODEL; DIAMOND SURFACES; ELECTRICAL PROPERTY; ELECTROCHEMICAL POTENTIAL; ELECTRON-TRANSFER; HYDROGEN-TERMINATED DIAMOND; NANO-MATERIALS; P-TYPE; P-TYPE CONDUCTION; PH VALUE; REVERSIBLE TRANSITIONS; SHARP CONTRAST; SILICON NANOWIRES; SILICON SURFACES; SURFACE CHARGE-TRANSFER DOPING; SURFACE CONDITIONS; SURFACE CONDUCTIVITY; SURFACE DOPING; SURFACE-TO-VOLUME RATIO; TRANSFER-DOPING;

CHARGE TRANSFER; CHARGED PARTICLES; DIAMONDS; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRONIC PROPERTIES; NANOWIRES; SHELLS (STRUCTURES);

FIELD EFFECT TRANSISTORS;

NANOMATERIAL; NANOTUBE; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 77955910351     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1001613     Document Type: Article

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