P-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

  Yuan, G D ^a   Ng, T W ^a   Zhou, Y B ^b   Wang, F ^b   Zhang, W J ^a   Tang, Y B ^a   Wang, H B ^a   Luo, L B ^a   Wang, P F ^b   Bello, I ^a   Lee, C S ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ENERGY; ETCHING METHOD; HETEROJUNCTION INTERFACES; INTERFACE CHARGE; INTRINSIC SILICON NANOWIRES; ORDERS OF MAGNITUDE; ORGANIC/INORGANIC HETEROJUNCTIONS; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; SILICON NANOWIRES; SURFACE COATINGS; TETRAFLUORO-TETRACYANOQUINODIMETHANE; THIN LAYERS; X-RAY PHOTOELECTRONS;

CHARGE TRANSFER; COATINGS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; HOLE CONCENTRATION; ION EXCHANGE; MASS TRANSFER; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON WAFERS;

EID: 77958087268     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3501122     Document Type: Article

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