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Volumn 5, Issue , 2014, Pages

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Author keywords

[No Author keywords available]

Indexed keywords

CYANOCOBALAMIN; DISULFIDE; MOLYBDENUM; SULFUR; THIOL;

EID: 84919367616     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms6290     Document Type: Article
Times cited : (645)

References (42)
  • 1
    • 80052090759 scopus 로고    scopus 로고
    • Performance limits of monolayer transition metal dichalcogenide transistors
    • Liu, L., Kumar, S. B., Ouyang, Y. & Guo, J. Performance limits of monolayer transition metal dichalcogenide transistors. IEEE Trans. Electron Devices 58, 3042-3047 (2011).
    • (2011) IEEE Trans. Electron Devices , vol.58 , pp. 3042-3047
    • Liu, L.1    Kumar, S.B.2    Ouyang, Y.3    Guo, J.4
  • 3
    • 84866027034 scopus 로고    scopus 로고
    • Integrated circuits based on bilayer MoS2 transistors
    • Wang, H. et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674-4680 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 4674-4680
    • Wang, H.1
  • 4
    • 84896376786 scopus 로고    scopus 로고
    • x contacts
    • x contacts. Nano Lett. 14, 1337-1342 (2014).
    • (2014) Nano Lett. , vol.14 , pp. 1337-1342
    • Chuang, S.1
  • 5
    • 84890561318 scopus 로고    scopus 로고
    • Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
    • Yu, W. et al. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotech. 8, 952-958 (2013).
    • (2013) Nat. Nanotech. , vol.8 , pp. 952-958
    • Yu, W.1
  • 8
    • 84897998266 scopus 로고    scopus 로고
    • 2 grown by chemical vapour deposition
    • 2 grown by chemical vapour deposition. Nano Lett. 14, 1909-1913 (2014).
    • (2014) Nano Lett. , vol.14 , pp. 1909-1913
    • Schmidt, H.1
  • 10
    • 84879112432 scopus 로고    scopus 로고
    • Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films
    • Liu, H. et al. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Lett. 13, 2640-2646 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 2640-2646
    • Liu, H.1
  • 11
    • 84889245669 scopus 로고    scopus 로고
    • Hopping transport through defect-induced localized states in molybdenum disulphide
    • Qiu, H. et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 4, 2642 (2013).
    • (2013) Nat. Commun. , vol.4 , pp. 2642
    • Qiu, H.1
  • 14
    • 84894608525 scopus 로고    scopus 로고
    • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
    • Zhu, W. et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 5, 3087 (2014).
    • (2014) Nat. Commun. , vol.5 , pp. 3087
    • Zhu, W.1
  • 16
    • 84896350554 scopus 로고    scopus 로고
    • Tailoring the physical properties of molybdenum disulphide monolayers by control of interfacial chemistry
    • Najmaei, S. et al. Tailoring the physical properties of molybdenum disulphide monolayers by control of interfacial chemistry. Nano Lett. 14, 1354-1361 (2014).
    • (2014) Nano Lett. , vol.14 , pp. 1354-1361
    • Najmaei, S.1
  • 17
    • 84884849918 scopus 로고    scopus 로고
    • 2 on crystalline hexagonal boron nitride substrates
    • 2 on crystalline hexagonal boron nitride substrates. Nanoscale 5, 9572-9576 (2013).
    • (2013) Nanoscale , vol.5 , pp. 9572-9576
    • Chan, M.1
  • 22
    • 84867841472 scopus 로고    scopus 로고
    • Selective adsorption of thiol molecules at sulfur vacancies on MoS2 (0001), followed by vacancy repair via S-C dissociation
    • Makarova, M., Okawa, Y. & Aono, M. Selective adsorption of thiol molecules at sulfur vacancies on MoS2 (0001), followed by vacancy repair via S-C dissociation. J. Phys. Chem. C 116, 22411-22416 (2012).
    • (2012) J. Phys. Chem. C , vol.116 , pp. 22411-22416
    • Makarova, M.1    Okawa, Y.2    Aono, M.3
  • 23
    • 26844451426 scopus 로고    scopus 로고
    • Engineering silicon oxide surfaces using self-assembled monolayers
    • Onclin, S., Ravoo, B. J. & Reinhoudt, D. N. Engineering silicon oxide surfaces using self-assembled monolayers. Angew. Chem. Int. Ed. 44, 6282-6304 (2005).
    • (2005) Angew. Chem. Int. Ed , vol.44 , pp. 6282-6304
    • Onclin, S.1    Ravoo, B.J.2    Reinhoudt, D.N.3
  • 24
    • 84863941695 scopus 로고    scopus 로고
    • Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping
    • Komsa, H. P. et al. Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. Phys. Rev. Lett. 109, 035503 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 035503
    • Komsa, H.P.1
  • 25
    • 84900331370 scopus 로고    scopus 로고
    • Charge scattering and mobility in atomically thin semiconductors
    • Ma, N. & Jena, D. Charge scattering and mobility in atomically thin semiconductors. Phys. Rev. X 4, 011043 (2014).
    • (2014) Phys. Rev. X , vol.4 , pp. 011043
    • Ma, N.1    Jena, D.2
  • 26
    • 85032069152 scopus 로고
    • Electronic properties of two-dimensional systems
    • Ando, T., Fowler, A. B. & Stern, F. Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437-672 (1982).
    • (1982) Rev. Mod. Phys. , vol.54 , pp. 437-672
    • Ando, T.1    Fowler, A.B.2    Stern, F.3
  • 27
    • 77954739359 scopus 로고    scopus 로고
    • Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping
    • Xie, H., Alves, H. & Morpurgo, A. F. Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: intrinsic properties and trapping. Phys. Rev. B 80, 245305 (2009).
    • (2009) Phys. Rev. B , vol.80 , pp. 245305
    • Xie, H.1    Alves, H.2    Morpurgo, A.F.3
  • 28
    • 10944220172 scopus 로고    scopus 로고
    • Intrinsic hole mobility and trapping in a regioregular poly(thiophene)
    • Salleo, A. et al. Intrinsic hole mobility and trapping in a regioregular poly(thiophene). Phys. Rev. B 70, 115311 (2004).
    • (2004) Phys. Rev. B , vol.70 , pp. 115311
    • Salleo, A.1
  • 29
    • 84881593348 scopus 로고    scopus 로고
    • Direct imaging of charged impurity density in common graphene substrates
    • Burson, K. et al. Direct imaging of charged impurity density in common graphene substrates. Nano Lett. 13, 3576-3580 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 3576-3580
    • Burson, K.1
  • 31
    • 38849201768 scopus 로고    scopus 로고
    • Observation of electron-hole puddles in graphene using a scanning single-electron transistor
    • Martin, J. et al. Observation of electron-hole puddles in graphene using a scanning single-electron transistor. Nat. Phys. 4, 144-148 (2008).
    • (2008) Nat. Phys. , vol.4 , pp. 144-148
    • Martin, J.1
  • 32
  • 33
    • 84901193930 scopus 로고    scopus 로고
    • Black phosphorus field-effect transistors
    • Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotech. 9, 372-377 (2014).
    • (2014) Nat. Nanotech. , vol.9 , pp. 372-377
    • Li, L.1
  • 34
    • 84863855836 scopus 로고    scopus 로고
    • 2 p-FETs with chemically doped contacts
    • 2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788-3792 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 3788-3792
    • Fang, H.1
  • 36
    • 35949007146 scopus 로고
    • Ab initio molecular dynamics for open-shell transition metals
    • Kresse, G. & Hafner, J. Ab initio molecular dynamics for open-shell transition metals. Phys. Rev. B 48, 13115-13118 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 13115-13118
    • Kresse, G.1    Hafner, J.2
  • 37
    • 0030190741 scopus 로고    scopus 로고
    • Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
    • Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996).
    • (1996) Comput. Mater. Sci. , vol.6 , pp. 15-50
    • Kresse, G.1    Furthmüller, J.2
  • 38
    • 25744460922 scopus 로고
    • Projector augmented-wave method
    • Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
    • (1994) Phys. Rev. B , vol.50 , pp. 17953-17979
    • Blöchl, P.E.1
  • 39
    • 33744691386 scopus 로고
    • Ground state of the electron gas by a stochastic method
    • Ceperley, D. M. Ground state of the electron gas by a stochastic method. Phys. Rev. Lett. 45, 566-569 (1980).
    • (1980) Phys. Rev. Lett. , vol.45 , pp. 566-569
    • Ceperley, D.M.1
  • 40
    • 0034513054 scopus 로고    scopus 로고
    • A climbing image nudged elastic band method for finding saddle points and minimum energy paths
    • Henkelman, G., Uberuaga, B. P. & Jónsson, H. A climbing image nudged elastic band method for finding saddle points and minimum energy paths. J. Chem. Phys. 113, 9901 (2000).
    • (2000) J. Chem. Phys. , vol.113 , pp. 9901
    • Henkelman, G.1    Uberuaga, B.P.2    Jónsson, H.3
  • 41
    • 84859524063 scopus 로고    scopus 로고
    • Electrical characterization of back-gated bi-layer field-effect transistors and the effect of ambient on their performances
    • Qiu, H. et al. Electrical characterization of back-gated bi-layer field-effect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 100, 123104 (2012).
    • (2012) Appl. Phys. Lett. , vol.100 , pp. 123104
    • Qiu, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.