CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters

ACS Applied Materials and Interfaces

Volumn 7, Issue 24, 2015, Pages 13131-13136

  Jin, Weifeng ^a   Zhang, Kun ^a   Gao, Zhiwei ^a   Li, Yanping ^a   Yao, Li ^a   Wang, Yilun ^a   Dai, Lun ^a,b  

^a PEKING UNIVERSITY   (China)

^b Collaborative Innovation Center of Quantum Matter ^*  (China)

Author keywords

flexible; inverters; MESFETs; nanowires; Schottky diodes

Indexed keywords

DIODES; ELECTRIC INVERTERS; ELECTRIC RECTIFIERS; FIELD EFFECT SEMICONDUCTOR DEVICES; MESFET DEVICES; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; THRESHOLD VOLTAGE; TRANSISTORS;

FLEXIBLE; MESFETS; NANOELECTRONIC DEVICES; ON/OFF CURRENT RATIO; PEAK TRANSCONDUCTANCE; RECTIFICATION RATIO; SCHOTTKY DIODES; SQUARE WAVE SIGNALS;

FIELD EFFECT TRANSISTORS;

EID: 84932597955     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b02929     Document Type: Letter

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