Complementary thin-film electronics based on n-channel ZnO and p-channel ZnTe

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1314-1316

  Bowen, Willie E ^a   Wang, Weiming ^a   Phillips, Jamie D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Complementary thin film transistor (TFT) inverter; Zinc oxide (ZnO); Zinc telluride (ZnTe)

Indexed keywords

COMPLEMENTARY LOGIC CIRCUITS; COMPLEMENTARY THIN-FILM TRANSISTOR (TFT) INVERTER; CURRENT RATIOS; FIELD-EFFECT MOBILITIES; GATE CONFIGURATION; HIGH OUTPUT VOLTAGE; LOW OUTPUT VOLTAGE; N-CHANNEL; OFF CURRENT; ON/OFF CURRENT RATIO; SI SUBSTRATES; SMALL SIGNAL GAIN; SUPPLY VOLTAGES; TRANSFER CHARACTERISTICS; ZINC TELLURIDES; ZNO;

FIELD EFFECT TRANSISTORS; LOGIC CIRCUITS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; SWITCHING CIRCUITS; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 70450265180     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2033949     Document Type: Article

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