Ultralow contact resistivity of Cu/Au with p-type ZnS nanoribbons for nanoelectronic applications

IEEE Electron Device Letters

Volumn 34, Issue 6, 2013, Pages 810-812

  Yu, Yongqiang ^a   Zeng, Longhui ^a   Jiang, Yang ^a   Jie, Jiansheng ^b  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b SOOCHOW UNIVERSITY   (China)

Author keywords

Cu Au electrode; ohmic contact; p type; Schottky barrier diodes; ZnS nanoribbons (NRs)

Indexed keywords

CONTACT RESISTIVITIES; INTERFACE ANALYSIS; INTERFACIAL LAYER; NANOELECTRONIC APPLICATIONS; P-TYPE; ROOM TEMPERATURE; SPECIFIC CONTACT RESISTIVITY; ZNS NANORIBBONS (NRS);

AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONTACTORS; NANORIBBONS; NANOSTRUCTURES; OHMIC CONTACTS; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; TRANSMISSION ELECTRON MICROSCOPY;

ZINC SULFIDE;

EID: 84878294574     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2258319     Document Type: Article

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