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Volumn 27, Issue 19, 2017, Pages

Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

Author keywords

2D materials; Anderson's rule; electron affinity rule; heterojunctions; transition metal dichalcogonides

Indexed keywords

CHARGE TRANSFER; DANGLING BONDS; ELECTRON AFFINITY; LATTICE MISMATCH; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; TRANSITION METALS; VAN DER WAALS FORCES;

EID: 84988344329     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201603756     Document Type: Article
Times cited : (88)

References (44)
  • 15
    • 84894318010 scopus 로고    scopus 로고
    • “Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs,” presented at, 2013 IEEE Int. Electron Devices Meet, 9–11 December
    • D. Lizzit, D. Esseni, P. Palestri, L. Selmi, “Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs,” presented at 2013 IEEE Int. Electron Devices Meet., 9–11 December 2013.
    • (2013)
    • Lizzit, D.1    Esseni, D.2    Palestri, P.3    Selmi, L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.