Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

ACS Nano

Volumn 10, Issue 3, 2016, Pages 3852-3858

  Zhang, Kenan ^a   Zhang, Tianning ^a   Cheng, Guanghui ^e   Li, Tianxin ^a   Wang, Shuxia ^a   Wei, Wei ^a   Zhou, Xiaohao ^a   Yu, Weiwei ^a   Sun, Yan ^a   Wang, Peng ^a   Zhang, Dong ^b   Zeng, Changgan ^e   Wang, Xingjun ^a   Hu, Weida ^a   Fan, Hong Jin ^c   Shen, Guozhen ^b   Chen, Xin ^a   Duan, Xiangfeng ^d   Chang, Kai ^b,f   Dai, Ning ^a,f  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^f UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

interlayer transition; MoS2; MoTe2; type II band alignment; van der Waals heterostructure

Indexed keywords

DENSITY FUNCTIONAL THEORY; DESIGN FOR TESTABILITY; HETEROJUNCTIONS; PHOTODETECTORS; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

DENSITY FUNCTION THEORY; INTERLAYER TRANSITION; KELVIN PROBE FORCE MICROSCOPY; MOTE2; PHOTOELECTRICAL MEASUREMENTS; PHOTOINDUCED CHARGE SEPARATION; TYPE II BAND ALIGNMENTS; VAN DER WAALS;

VAN DER WAALS FORCES;

EID: 84961892052     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b00980     Document Type: Article

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