Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

Nano Letters

Volumn 15, Issue 4, 2015, Pages 2336-2342

  Lezama, Ignacio Gutiérrez ^a   Arora, Ashish ^b   Ubaldini, Alberto ^a,c   Barreteau, Céline ^a   Giannini, Enrico ^a   Potemski, Marek ^b   Morpurgo, Alberto F ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c UNIVERSITY OF SALERNO   (Italy)

Author keywords

2D crystals; Band gap crossover; Exciton and trion; Molybdenum ditelluride; Photoluminescence; Reflectance; Semiconducting transition metal dichalcogenides

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; EXCITONS; MOLYBDENUM COMPOUNDS; PHOTOLUMINESCENCE; REFLECTION; TEMPERATURE; TRANSITION METALS;

2-D CRYSTALS; BAND GAP STRUCTURE; DEVICE APPLICATION; DIRECT BAND GAP SEMICONDUCTORS; MOLYBDENUM DITELLURIDE; SEMICONDUCTING TRANSITION; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TRION;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 84927126097     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5045007     Document Type: Article

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