Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy

ACS Nano

Volumn 9, Issue 10, 2015, Pages 9868-9876

  Chen, Kun ^a   Wan, Xi ^a   Wen, Jinxiu ^b   Xie, Weiguang ^c   Kang, Zhiwen ^a   Zeng, Xiaoliang ^d   Chen, Huanjun ^b   Xu, Jian Bin ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b SUN YAT SEN UNIVERSITY   (China)

^c JINAN UNIVERSITY   (China)

^d SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY   (China)

Author keywords

built in electric field; built in potential; depletion layer width; KPFM; MoS2 WS2 heterostructure; two step epitaxial CVD method

Indexed keywords

ELECTRIC FIELDS; ELECTRONIC PROPERTIES; FLEXIBLE ELECTRONICS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLYBDENUM COMPOUNDS; MONOLAYERS; MULTILAYERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC EFFECTS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

BUILT-IN ELECTRIC FIELDS; BUILT-IN POTENTIAL; CVD METHOD; DEPLETION LAYER; KPFM;

HETEROJUNCTIONS;

EID: 84945971820     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b03188     Document Type: Article

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