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Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy

(6) Swaminathan, K a Grassman, T J a Yang, L M a Gu, Q a Mills, M J a Ringel, S A a,b

a The Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTHS; DIODE DESIGN; DUAL-BAND; ELECTRICAL ISOLATION; GAAS; HIGH QUALITY; HIGH-ELECTRONIC-QUALITY; LATTICE-MISMATCHED; METAMORPHIC MATERIALS; MULTIBAND; OPTICAL CROSS-TALK; RESPONSIVITY; REVERSE BIAS; ROOM TEMPERATURE; SIMULTANEOUS DETECTION; SPECIFIC DETECTIVITY; TRAP CONCENTRATION; WAVELENGTH BAND;

DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM; GROWTH (MATERIALS); INDIUM; PHOTODETECTORS; POWER QUALITY;

DETECTORS;

EID: 80053493835 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3642981 Document Type: Article

Times cited : (28)

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