Voltage-controlled cycling endurance of HfOx-based resistive-switching memory

IEEE Transactions on Electron Devices

Volumn 62, Issue 10, 2015, Pages 3365-3372

  Balatti, Simone ^a   Ambrogio, Stefano ^a   Wang, Zhongqiang ^a   Sills, Scott ^b   Calderoni, Alessandro ^b   Ramaswamy, Nirmal ^b   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

Cycling endurance; Device modeling; Memory reliability; Resistive switching memory (RRAM)

Indexed keywords

METALS; NONVOLATILE STORAGE; SWITCHING; SWITCHING SYSTEMS;

ARRHENIUS LAW; COMPLIANCE CURRENT; CYCLING ENDURANCE; DEVICE LIFETIME; FUNCTION OF TIME; RESISTIVE SWITCHING MEMORY; STORAGE-CLASS MEMORY; VOLTAGE-CONTROLLED;

RANDOM ACCESS STORAGE;

EID: 84958116289     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2015.2463104     Document Type: Article

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