Performance comparison of O-based and Cu-based ReRAM for high-density applications

2014 IEEE 6th International Memory Workshop, IMW 2014

Volumn , Issue , 2014, Pages

  Calderoni, Alessandro ^a   Sills, Scott ^a   Ramaswamy, Nirmal ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

Conductive bridge; Endurance; Noise; Oxygen vacancy; Resistive memory; Retention; Variability

Indexed keywords

DATA STORAGE EQUIPMENT; DURABILITY; METAL IONS; OXYGEN; OXYGEN VACANCIES;

HIGH-DENSITY APPLICATIONS; NOISE; NON-VOLATILE MEMORY; PERFORMANCE COMPARISON; RESISTIVE MEMORY; RESISTIVE SWITCHING MEMORY; RETENTION; VARIABILITY;

NONVOLATILE STORAGE;

EID: 84904661750     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2014.6849351     Document Type: Conference Paper

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