Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability

IEEE Transactions on Electron Devices

Volumn 61, Issue 8, 2014, Pages 2912-2919

  Ambrogio, Stefano ^a   Balatti, Simone ^a   Cubeta, Antonio ^a   Calderoni, Alessandro ^b   Ramaswamy, Nirmal ^b   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

Noise fluctuations; random telegraph noise (RTN); resistive switching memory (RRAM)

Indexed keywords

DISPLAY DEVICES; STATISTICAL MECHANICS;

CONDUCTIVE FILAMENTS; NOISE FLUCTUATIONS; OPERATION PARAMETERS; RANDOM TELEGRAPH NOISE; RESISTIVE SWITCHING MEMORY; STATISTICAL FLUCTUATIONS; STATISTICAL VARIABILITY; THIN INSULATING LAYERS;

RANDOM ACCESS STORAGE;

EID: 84905173570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2330200     Document Type: Article

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