Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Hsu, Chung Wei ^a   Wang, I Ting ^a   Lo, Chun Li ^a   Chiang, Ming Chung ^b   Jang, Wen Yueh ^b   Lin, Chen Hsi ^b   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

RECTIFICATION RATIO; ROOM-TEMPERATURE PROCESS; STORAGE-CLASS MEMORY; ULTRAHIGH DENSITY;

THREE DIMENSIONAL; TITANIUM DIOXIDE;

RANDOM ACCESS STORAGE;

EID: 84883399801     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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