A copper ReRAM cell for Storage Class Memory applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2014, Pages

  Sills, Scott ^a   Yasuda, Shuichiro ^b   Strand, Jonathan ^a   Calderoni, Alessandro ^a   Aratani, Katsuhisa ^b   Johnson, Adam ^a   Ramaswamy, Nirmal ^a  

^a MICRON TECHNOLOGY INC   (United States)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DYNAMIC RANDOM ACCESS STORAGE; RRAM;

DATA BACKUPS; HIGHER SPEED; HYBRID MEMORY; NON-VOLATILE; PERFORMANCE SPECIFICATIONS; RESISTIVE RANDOM ACCESS MEMORY (RERAM); STORAGE-CLASS MEMORY; SYSTEM EFFICIENCY;

CACHE MEMORY;

EID: 84907693286     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2014.6894368     Document Type: Conference Paper

References (6)

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