Vertical current-flow enhancement via fabrication of GaN nanorod p-n junction diode on graphene

Applied Surface Science

Volumn 347, Issue , 2015, Pages 793-798

  Ryu, Sung Ryong ^a   Ram, S D Gopal ^a   Lee, Seung Joo ^a   Cho, Hak Dong ^a   Lee, Sejoon ^a   Kang, Tae Won ^a,b   Kwon, Sangwoo ^a   Yang, Woochul ^a   Shin, Sunhye ^c   Woo, Yongdeuk ^d  

^a Dongguk University   (South Korea)

^b HINDUSTAN INSTITUTE OF TECHNOLOGY AND SCIENCE   (India)

^c Soft Epi Inc   (South Korea)

^d Woosuk University   (South Korea)

Author keywords

GaN nanorod; Hydride vapor phase epitaxy; I V characteristics; Kelvin force probe microscopy; Monolayer graphenea; Uniaxial p n junction nanorod

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; GRAPHENE; HYDRIDES; III-V SEMICONDUCTORS; MONOLAYERS; NANORODS; PROBES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

GAN NANORODS; HYDRIDE VAPOR PHASE EPITAXY; IV CHARACTERISTICS; KELVIN FORCE PROBE MICROSCOPIES; P-N JUNCTION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84952001250     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.04.076     Document Type: Article

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