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Volumn 44, Issue 9, 2012, Pages 1885-1888

Effect of growth temperature on gallium nitride nanostructures using HVPE technique

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; EMISSION PROPERTIES; GALLIUM NITRIDE NANOSTRUCTURES; GAN NANOSTRUCTURES; HEXAGONAL WURTZITE STRUCTURE; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPES; HYDRIDE VAPOR PHASE EPITAXY; MICRO RAMAN SPECTROSCOPY; OXIDE PHASE; SAPPHIRE SUBSTRATES; WURZITE;

EID: 84863302312     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2012.05.014     Document Type: Article
Times cited : (3)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.