Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Kim, Byung Jae ^a   Lee, Chongmin ^a   Mastro, Michael A ^b   Hite, Jennifer K ^b   Eddy, Charles R ^b   Ren, Fan ^c   Pearton, Stephen J ^c   Kim, Jihyun ^a  

^a Korea University   (South Korea)

^b NAVAL RESEARCH LABORATORY   (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTROCHEMICAL ELECTRODES; GALLIUM NITRIDE; GRAPHITE ELECTRODES; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; OXIDATION; PASSIVATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CURRENT-VOLTAGE; GAN BASED; GRAPHENE ELECTRODES; HIGH OPERATING TEMPERATURE; LIGHT INTENSITY; PASSIVATION LAYER; SATURATED CARBON ATOM; TRANSPARENT CONDUCTIVE LAYER; ULTRA-VIOLET LIGHT; VIOLET LIGHT EMITTING DIODES;

GRAPHENE;

EID: 84864261690     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733981     Document Type: Article

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